Title: Two nanostructured platforms: MoS 2 / MoO x (x=2 and 3) composite
and porous Si
سخنران: dr. Salim Erfanifam
زمان : سه شنبه ۱۶ آذر ساعت ۱۶
مکان : دانشگاه شهید بهشتی، دانشکده فیزیک، تالار ابن هیثم
مسئول اجرایی: فاطمه فرهادی
طراح پوستر: شیوا صداقت
چکیده:
In this talk, I will report on two nanostructured platforms: the MoS 2 and MoO x (x=2 and 3) composite thin
layers, electrodeposited, onto a Florine doped Tin Oxide (FTO) substrate and porous Si (Psi). In the first
platform, our results show a change in relative content of these compounds in different thicknesses
ranging from ∼۲۰ to 540 nm. The Optical and electrical bandgaps reveal a tunable behavior by controlling
the relative content. In addition, a sharp transition from p to n-type of semiconductivity is observed. We
find that the spin-orbit interaction of Mo 3d electrons in the MoS 2 and MoO 3 enhances by significant
reduction of the MoO 3 content in thicker layers. In the second platform, fabrication of the Porous Si by
anodization will be discussed. The different morphology and properties of the pores for potentials below
and above 30V classifies the anodization process to two main regimes. The characterization by SEM shows
that in the high potential regime a cylindrical or rectangular nanopores can be obtained, while in low
potential regime, mostly the cylindrical pores are possible. In addition, interpore, pore diameter and
porosity by applied potential is tuned.
